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ISCNH431W Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISCNH431W
Description  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH431W Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCNH431W Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCNH431W Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCNH431W Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
ISCNH431W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
800
--
--
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID= 0.25mA
2.5
--
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 8A
--
--
0.26
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 800V; VGS= 0
--
--
1
uA
Ciss
Input Capacitance
VGS = 0V,
VDS = 50V,
f = 1.0MHz
-
2224
-
pF
Coss
Output Capacitance
-
90
-
Crss
Reverse Transfer Capacitance
-
2.8
-
Qg
Total Gate Charge
VDD = 480V,
ID = 10A,
VGS = 10V
-
45
-
nC
Qgs
Gate-Source Charge
-
10
-
Qgd
Gate-Drain Charge
-
21
-
td(on)
Turn-on Delay Time
VDD = 300V,
ID = 10A,
VGS = 10V,
RG = 25Ω
-
45
-
ns
tr
Turn-on Rise Time
-
62
-
td(off)
Turn-off Delay Time
-
160
-
tf
Turn-off Fall Time
-
34
-
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
ISD= 8A; VGS= 0V
-
-
1.2
V
trr
Reverse Recovery Time
VDD = 50V,IF = 10A,
diF/dt = 100A /μs
-
270
-
ns
Qrr
Reverse Recovery Charge
-
3.9
-
uC



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