1998

©

Document No. D16151EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTORS

2SC3622, 3622A

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

•

High hFE:

hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA

•

Low VCE(sat):

VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA

•

High VEBO:

VEBO: 12 V (2SC3622)

VEBO: 15 V (2SC3622A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Ratings

Parameter

Symbol

2SC3622 2SC3622A

Unit

Collector to base voltage

VCBO

60

V

Collector to emitter voltage

VCEO

50

V

Emitter to base voltage

VEBO

12

15

V

Collector current (DC)

IC(DC)

150

mA

Total power dissipation

PT

250

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

PACKAGE DRAWING (UNIT: mm)

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 50 V, IE = 0

100

nA

Emitter cutoff current

IEBO

VEB = 10 V, IC = 0

100

nA

DC current gain

hFE1 *VCE = 5.0 V, IC = 1.0 mA

1000

1800

3200

−

DC current gain

hFE2 *VCE = 5.0 V, IC = 100 mA

200

350

DC base voltage

VBE *VCE = 5.0 V, IC = 1.0 mA

560

mV

Collector saturation voltage

VCE(sat) *IC = 50 mA, IB = 5.0 mA

0.07

0.30

V

Base saturation voltage

VBE(sat) *IC = 50 mA, IB = 5.0 mA

0.8

1.2

V

Gain bandwidth product

fT

VCE = 5.0 V, IE =

−10 mA

250

MHz

Output capacitance

Cob

VCB = 5 V, IE = 0, f = 1.0 MHz

3.0

pF

Turn-on time

ton

0.13

µs

Storage temperature

tstg

0.72

µs

Fall time

toff

VCC = 10 V, VBE(off) = –2.7 V

IC = 50 mA

IB1 =

−IB2 = 1 mA

1.22

µs

* Pulse test PW

≤ 350

µs, duty cycle ≤ 2% per pulsed