1998

©

Document No. D13521EJ4V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTORS

2SC3623, 3623A

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

• High hFE:

hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA

• Low VCE(sat):

VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA

• High VEBO:

VEBO: 12 V (2SC3623)

VEBO: 15 V (2SC3623A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Ratings

Parameter

Symbol

2SC3623 2SC3623A

Unit

Collector to base voltage

VCBO

60

V

Collector to emitter voltage

VCEO

50

V

Emitter to base voltage

VEBO

12

15

V

Collector current (DC)

IC(DC)

150

mA

Total power dissipation

PT

250

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

PACKAGE DRAWING (UNIT: mm)

Electrode connection

1. Emitter (E)

2. Collector (C)

3. Base (B)