The information in this document is subject to change without notice.

SILICON TRANSISTOR

2SC4956

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

FEATURES

•

Low Noise, High Gain

•

Low Voltage Operation

•

Low Feedback Capacitance

Cre = 0.20 pF TYP.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC4956-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to perforation

side of the tape.

2SC4956-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face to perfora-

tion side of the tape.

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

6V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

10

mA

Total Power Dissipation

PT

60

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

©

1993

DATA SHEET

2.8 –0.3

+0.2

1.5 –0.1

+0.2

5˚

5˚

5˚

5˚

PACKAGE DIMENSIONS

in millimeters

PIN CONNECTIONS

1.

2.

3.

4.

Collector

Emitter

Base

Emitter

Caution; Electrostatic Sensitive Device.

Document No. P10378EJ2V0DS00 (2nd edition)

(Previous No. TD-2407)

Date Published July 1995 P

Printed in Japan