Nexperia

BAT854SW-Q

40 V, 200 mA Schottky barrier dual diode

mld548

0

VR (V)

Cd

(pF)

10

20

40

20

0

16

30

12

8

4

f = 1 MHz; Tamb = 25 °C

Fig. 3. Diode capacitance as a function of reverse voltage; typical values

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

04-11-04

Dimensions in mm

0.45

0.15

1.1

0.8

2.2

1.8

2.2

2.0

1.35

1.15

1.3

0.4

0.3

0.25

0.10

1

2

3

Fig. 4. Package outline SC-70 (SOT323)

BAT854SW-Q

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Product data sheet

4 January 2023

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