2PB710AXL_1

Product data sheet

Rev. 01 — 29 October 2008

3 of 9

Nexperia

2PB710ARL; 2PB710ASL

50 V, 500 mA PNP general-purpose transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−60

V

VCEO

collector-emitter voltage

open base

-

−50

V

VEBO

emitter-base voltage

open collector

-

−5V

IC

collector current

-

−500

mA

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

−1A

IBM

peak base current

single pulse;

tp ≤ 1ms

-

−200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from junction

to ambient

in free air

[1] -

-

500

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −60 V; IE =0A

-

-

−10

nA

VCB = −60 V; IE =0A;

Tj = 150 °C

--

−5

µA

IEBO

emitter-base cut-off current VEB = −5 V; IC =0A

-

-

−10

nA

hFE

DC current gain

VCE = −10 V;

IC = −500 mA

[1] 40

-

-

hFE group R

VCE = −10 V;

IC = −150 mA

[1] 120

-

240

hFE group S

VCE = −10 V;

IC = −150 mA

[1] 170

-

340

VCEsat

collector-emitter saturation

voltage

IC = −300 mA;

IB = −30 mA

[1] --

−600 mV

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