2003 Jul 15

3

NXP Semiconductors

Product data sheet

NPN general purpose transistors

2PC4617M series

THERMAL CHARACTERISTICS

Notes

1.

Refer to SOT883 standard mounting conditions (footprint), FR4 with 60

μm copper strip line.

2.

Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

note 1

500

K/W

note 2

290

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 30 V; IE = 0

−

100

nA

VCB = 30 V; IE = 0; Tj = 150 °C

−

5

μA

IEBO

emitter-base cut-off current

VEB = 4 V; IC = 0

−

100

nA

hFE

DC current gain

VCE = 6 V; IC = 1 mA

2PC4617QM

120

270

2PC4617RM

180

390

2PC4617SM

270

560

VCEsat

collector-emitter saturation voltage

IC = 50 mA; IB = 5 mA; note 1

−

200

mV

Cc

collector capacitance

IE = ie = 0; VCB = 12 V; f = 1 MHz

−

1.5

pF

fT

transition frequency

VCE = 12 V; IC = 2 mA;

f = 100 MHz

100

−

MHz