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2PC4617R Datasheet(PDF) 4 Page - Nexperia B.V. All rights reserved |
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2PC4617R Datasheet(HTML) 4 Page - Nexperia B.V. All rights reserved |
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4 / 8 page ![]() 2PC4617_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 November 2009 3 of 7 NXP Semiconductors 2PC4617 NPN general-purpose transistor 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. Table 6. Characteristics Tamb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current IE =0 A; VCB =30 V - - 100 nA IE =0 A; VCB =30 V; Tj = 150 °C -- 5 μA IEBO emitter-base cut-off current IC =0 A; VEB =4 V - - 100 nA hFE DC current gain IC =1mA; VCE =6 V [1] 2PC4617Q 120 - 270 2PC4617R 180 - 390 2PC4617S 270 - 560 VCEsat collector-emitter saturation voltage IC =50mA; IB =5mA [1] -- 200 mV Cc collector capacitance IE =ie =0 A; VCB =12V; f=1MHz -- 1.5 pF fT transition frequency IC =2mA; VCE =12 V; f = 100 MHz [1] 100 - - MHz |
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