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2PD601ASW Datasheet(PDF) 3 Page - Nexperia B.V. All rights reserved |
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2PD601ASW Datasheet(HTML) 3 Page - Nexperia B.V. All rights reserved |
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3 / 9 page ![]() Nexperia 2PD601ASW 50 V, 100 mA NPN general purpose transistor Tamb (°C) -75 175 125 25 75 -25 aaa-035228 100 150 50 200 250 Ptot (mW) 0 FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint Fig. 1. Power derating curve 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient [1] - - 625 K/W [1] Device mounted on an FR4 PCB, single-sided copper, 35 μm copper, tin-plated and standard footprint. aaa-035229 1 10-2 10-1 103 10 103 Zth(j-a) (K/W) 10-3 tp (s) 10-6 10-1 1 10-2 102 103 10 10-3 10-5 10-4 duty cycle = 1 0 0.01 0.02 0.75 0.50 0.33 0.20 0.10 0.05 FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint. Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2PD601ASW All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 1 October 2022 3 / 9 |
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