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Document No. D16191EJ1V1DS00 (1st edition)

Date Published December 2004 NS CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SD1692

NPN SILICON EPITAXIAL TRANSISTOR

(DARLINGTON CONNECTION)

DATA SHEET

2002

FEATURES

• High DC current gain due to Darlington connection

• Large current capacity and low VCE(sat)

• Large power dissipation TO-126 type power transistor

• Complementary transistor: 2SB1149

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

150

V

Collector to emitter voltage

VCEO

100

V

Emitter to base voltage

VEBO

8.0

V

Collector current (DC)

IC(DC)

±3.0

A

Collector current (pulse)

IC(pulse)*

±5.0

A

Total power dissipation

PT (Ta = 25

°C)

1.3

W

Total power dissipation

PT (Tc = 25

°C)

15

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

* PW

≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

ELECTRICAL CHARACTERISTICS (Ta = 25

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to emitter voltage

VCEO(SUS)

IC = 3.0 A, IB = 3.0 mA, L = 1.0 mH

100

V

Collector cutoff current

ICBO

VCB = 100 V, IE = 0

10

µA

Collector cutoff current

ICEO

VCE = 100 V, RBE =

∞

1.0

mA

DC current gain

hFE1**

VCE = 2.0 V, IC = 1.5 A

2,000

20,000

DC current gain

hFE2**

VCE = 2.0 V, IC = 3.0 A

1,000

Collector saturation voltage

VCE(sat)**

IC = 1.5 A, IB = 1.5 mA

0.9

1.2

V

Base saturation voltage

VBE(sat)**

IC = 1.5 A, IB = 1.5 mA

1.5

2.0

V

Turn-on time

ton

0.5

µs

Storage time

tstg

2.0

µs

Fall time

tf

IC = 1.5 A

IB1 =

−IB2 = 1.5 mA

RL = 27

Ω, VCC ≅ 40 V

1.0

µs

** Pulse test PW

≤ 350

µs, duty cycle ≤ 2%/per pulsed

hFE CLASSIFICATION

Marking

M

L

K

hFE1

2,000 to 5,000

4,000 to 12,000

8,000 to 20,000