Nexperia

BC846x series

65 V, 100 mA NPN general-purpose transistors

8. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

80

V

VCEO

collector-emitter voltage

open base

-

65

V

VEBO

emitter-base voltage

open collector

-

6

V

IC

collector current

-

100

mA

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

200

mA

IBM

peak base current

single pulse; tp ≤ 1 ms

-

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 7. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from junction to ambient

in free air

[1]

[2]

-

-

500

K/W

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided; 35 µm copper; tin-plated and standard footprint.

[2] Valid for all available selection groups.

aaa-028968

10-5

10

10-2

10-4

102

10-1

tp (s)

10-3

103

1

102

10

103

Zth(j-a)

(K/W)

1

duty cycle =

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

1

FR4 PCB, single-sided; 35 µm copper, tin-plated and standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BC846X_SER

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Product data sheet

Rev. 12 — 1 July 2022

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