Nexperia

BC856BSH

65 V, 100 mA PNP/PNP general-purpose double transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V(BR)CBO

collector-base

breakdown voltage

IC = -100 µA; IE = 0 A; Tamb = 25 °C

-80

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = -2 mA; IB = 0 A; Tamb = 25 °C

-65

-

-

V

V(BR)EBO

emitter-base

breakdown voltage

IC = 0 A; IE = -100 µA; Tamb = 25 °C

-7

-

-

V

VCB = -30 V; IE = 0 A; Tamb = 25 °C

-

-

-15

nA

ICBO

collector-base cut-off

current

VCB = -30 V; IE = 0 A; Tj = 150 °C

-

-

-5

µA

IEBO

emitter-base cut-off

current

VEB = -7 V; IC = 0 A; Tamb = 25 °C

-

-

-100

nA

hFE

DC current gain

VCE = -5 V; IC = -2 mA; Tamb = 25 °C

200

300

450

IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C

-

-50

-100

mV

VCEsat

collector-emitter

saturation voltage

IC = -100 mA; IB = -5 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-200

-300

mV

IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C [1]

-

-750

-850

mV

VBEsat

base-emitter saturation

voltage

IC = -100 mA; IB = -5 mA; Tamb = 25 °C

-

-875

-

mV

VCE = -5 V; IC = -2 mA; Tamb = 25 °C

[2]

-600

-655

-700

mV

VBE

base-emitter voltage

VCE = -5 V; IC = -10 mA; Tamb = 25 °C

[2]

-

-705

-770

mV

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

1.8

-

pF

Ce

emitter capacitance

VEB = -0.5 V; IC = 0 A; ic = 0 A;

f = 1 MHz; Tamb = 25 °C

-

8.5

-

pF

fT

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;

Tamb = 25 °C

100

-

-

MHz

VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ; f =

10 Hz to 15.7 kHz; Tamb = 25 °C

-

1.7

-

dB

NF

noise figure

VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz; Tamb = 25 °C

-

3.3

-

dB

[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2] VBE decreases by about 2 mV/K with increasing temperature.

BC856BSH

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Product data sheet

22 March 2021

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