Nexperia

BC856S-Q

65 V, 100 mA PNP/PNP general-purpose transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

[1]

-

-

568

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[2]

-

-

500

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

-

-

230

K/W

Per device

[1]

-

-

416

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[2]

-

-

313

K/W

[1] Device mounted on an FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided, 35 μm copper, tin-plated, mounting pad for collector 1 cm².

006aab420

10- 5

10

10- 2

10- 4

102

10- 1

tp (s)

10- 3

103

1

102

10

103

Zth(j-a)

(K/W)

1

δ = 1

0.75

0.50

0.33

0.10

0.05

0.02

0.01

0

0.20

FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint

Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aab421

10- 5

10

10- 2

10- 4

102

10- 1

tp (s)

10- 3

103

1

102

10

103

Zth(j-a)

(K/W)

1

δ = 1

0.75

0.50

0.33

0.10

0.05

0.02

0.01

0.20

0

FR4 PCB, single-sided, 35 μm copper, tin-plated, mounting pad for collector 1 cm2

Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

BC856S-Q

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Product data sheet

17 June 2021

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