Nexperia

PIMD2

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A; Tamb = 25 °C

[1]

50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 2 mA; IB = 0 A; Tamb = 25 °C

[1]

50

-

-

V

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

[1]

-

-

100

nA

VCE = 30 V; IB = 0 A; Tamb = 25 °C

[1]

-

-

100

nA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0 A; Tj = 150 °C

[1]

-

-

5

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 mA; Tamb = 25 °C

[1]

-

-

180

µA

hFE

DC current gain

VCE = 5 V; IC = 5 mA; Tamb = 25 °C

[1]

60

-

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

[1]

-

-

150

mV

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

[1]

-

1.1

0.8

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C

2.5

1.7

-

V

R1

bias resistor 1 (input)

[2]

15.4

22

28.6

kΩ

R2/R1

bias resistor ratio

[2]

0.8

1

1.2

TR1 (NPN)

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

-

2.5

pF

fT

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz;

Tamb = 25 °C

[3]

-

230

-

MHz

TR2 (PNP)

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

3

pF

fT

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;

Tamb = 25 °C

[3]

-

180

-

MHz

[1] For the PNP transistor with negative polarity.

[2] See section "Test information" for resistor calculation and test conditions.

[3] Characteristics of built-in transistor

PIMD2

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

13 March 2023

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