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M59DR032EA Datasheet(PDF) 15 Page - STMicroelectronics

Part # M59DR032EA
Description  32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory
PDF  43 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M59DR032EA Datasheet(HTML) 15 Page - STMicroelectronics

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M59DR032EA, M59DR032EB
Table 8. Read Protection Register
Note: X= Don’t care.
Table 9. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Excludes the time needed to execute the sequence for program command.
2. Same timing value if VPP = 12V
Word
E
G
W
A20-A8
A7-0
DQ15-8
DQ7-3
DQ2
DQ1
DQ0
Lock
VIL
VIL
VIH
X
80h
XXh
00000b
Security
prot.data
OTP
prot.data
0
Unique ID 0
VIL
VIL
VIH
X
81h
ID data
ID data
ID data
ID data
ID data
Unique ID 1
VIL
VIL
VIH
X
82h
ID data
ID data
ID data
ID data
ID data
Unique ID 2
VIL
VIL
VIH
X
83h
ID data
ID data
ID data
ID data
ID data
Unique ID 3
VIL
VIL
VIH
X
84h
ID data
ID data
ID data
ID data
ID data
OTP 0
VIL
VIL
VIH
X
85h
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 1
VIL
VIL
VIH
X
86h
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 2
VIL
VIL
VIH
X
87h
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 3
VIL
VIL
VIH
X
88h
OTP data
OTP data
OTP data
OTP data
OTP data
Parameter
M59DR032E
Unit
Min
Max
Typ
Typical after
100k W/E Cycles
Parameter Block (4 KWord) Erase (Preprogrammed)
2.5
0.3
1
s
Main Block (32 KWord) Erase (Preprogrammed)
4
0.8
3
s
Bank Erase (Preprogrammed, Bank A)
3
6
s
Bank Erase (Preprogrammed, Bank B)
20
30
s
Chip Program (1)
20
25
s
Chip Program (Double Word, VPP = 12V)
(1)
8s
Word Program (2)
100
10
µs
Double Word Program (VPP = 12V)
100
8
µs
Quadruple Word Program (VPP = 12V)
100
8
µs
Program/Erase Cycles (per Block)
100,000
cycles



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