Nexperia

BCP55 series

60 V, 1 A NPN medium power transistors

8. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

60

V

VCEO

collector-emitter voltage

open base

-

60

V

VEBO

emitter-base voltage

open collector

-

5

V

IC

collector current

-

1

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

2

A

IB

base current

-

0.3

A

IBM

peak base current

single pulse; tp ≤ 1 ms

-

0.3

A

Tamb ≤ 25 °C

[1]

-

0.65

W

[2]

-

1.00

W

Ptot

total power dissipation

[3]

-

1.35

W

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2.

Tamb (°C)

-75

175

125

25

75

-25

006aac674

0.5

1.0

1.5

Ptot

(W)

0.0

(1)

(2)

(3)

(1) FFR4 PCB,mounting pad for collector 6 cm2

(2) FFR4 PCB, mounting pad for collector 1 cm2

(3) FR4 PCB, standard footprint

Fig. 1. Power derating curves SOT223

BCP55_SER

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Product data sheet

Rev. 9 — 1 July 2022

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