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STG15M120F3D8 Datasheet(PDF) 4 Page - STMicroelectronics |
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STG15M120F3D8 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() 3 Die layout Figure 1. Die drawing (dimensions are in mm) G E 4.40 2.57 1.20 0.82 3.37 4.40 GADG091120171131SA Table 5. Mechanical parameters Symbol Value Unit Die size including scribe line 4.40 x 4.40 mm Wafer size 200 mm Maximum possible dice per wafer 1353 dice Die thickness 110 µm Front side passivation Silicone nitride Emitter pad size including gate pad 2.57 x 3.37 mm Gate pad size 0.82 x 1.20 mm Front side metallization composition AlCu thickness 4.5 µm Back side metallization composition AI/Ti/NiV/Ag thickness 0.65 µm Die bond Electrically conductive glue or soft solder Recommended wire bonding ≤500 µm STG15M120F3D8 Die layout DS13889 - Rev 1 page 4/8 |
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