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GWA40MS120DF4AG Datasheet(PDF) 2 Page - STMicroelectronics |
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GWA40MS120DF4AG Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 15 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 1200 V IC Continuous collector current at TC = 25 °C 80 A Continuous collector current at TC = 100 °C 40 ICP (1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 80 A Continuous forward current at TC = 100 °C 40 IFP(1) Pulse forward current 120 A PTOT Total power dissipation at TC = 25 °C 536 W Tstg Storage temperature range -55 to 150 °C TJ Operating junction temperature range -55 to 175 °C 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance, junction-to-case, IGBT 0.28 °C/W Thermal resistance, junction-to-case, diode 0.48 RthJA Thermal resistance, junction-to-ambient 50 °C/W GWA40MS120DF4AG Electrical ratings DS14215 - Rev 2 page 2/15 |
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