PBLS2002S datasheet(9/17 Pages) NEXPERIA

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PBLS2002S_2

Product data sheet

Rev. 02 — 24 August 2009

8 of 16

NXP Semiconductors

PBLS2002S

20 V PNP BISS loadswitch

VCE = −2V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 5.

TR1 (PNP): DC current gain as a function of

collector current; typical values

Fig 6.

TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

VCE = −2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 8.

TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

006aaa800

400

200

600

800

hFE

IC (mA)

−1

−104

−103

−10

−102

(1)

(2)

(3)

VCE (V)

−2.0

−1.6

−0.8

−1.2

−0.4

006aaa801

−2

−3

−1

−4

−5

(A)

IB (mA) =

−18.0

−22.5

−27.0

−31.5

−36.0

−40.5

−45.0

−13.5

−9.0

−4.5

006aaa802

−0.5

−0.7

−0.3

−0.9

−1.1

VBE

(V)

−0.1

IC (mA)

−1

−104

−103

−10

−102

(1)

(2)

(3)

006aaa803

−0.5

−0.7

−0.3

−0.9

−1.1

VBEsat

(V)

−0.1

IC (mA)

−1

−104

−103

−10

−102

(1)

(2)

(3)

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