1998

©

Document No. D16174EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

COMPOUND TRANSISTOR

BA1F4Z

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

•

On-chip bias resistor

(R1 = 22 k

Ω)

•

Complementary transistor with BN1F4Z

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

60

V

Collector to emitter voltage

VCEO

50

V

Emitter to base voltage

VEBO

5V

Collector current (DC)

IC(DC)

100

mA

Collector current (Pulse)

IC(pulse) *

200

mA

Total power dissipation

PT

250

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50 %

PACKAGE DRAWING (UNIT: mm)

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 50 V, IE = 0

100

nA

DC current gain

hFE1 **

VCE = 5.0 V, IC = 5.0 mA

135

330

600

−

DC current gain

hFE2 **

VCE = 5.0 V, IC = 50 mA

100

290

−

Collector saturation voltage

VCE(sat) **

IC = 5.0 mA, IB = 0.25 mA

0.04

0.2

V

Low level input voltage

VIL **

VCE = 5.0 V, IC = 100

µA

0.55

0.5

V

High level input voltage

VIH **

VCE = 0.2 V, IC = 5.0 mA

3.0

1.05

V

Input resistance

R1

15.4

22

28.6

k

Ω

Turn-on time

ton

0.2

µs

Storage time

tstg

5.0

µs

Turn-off time

toff

VCC = 5.0 V, RL = 1.0 k

Ω

VI = 5.0 V, PW = 2.0

µs

duty cycle

≤2 %

6.0

µs

** Pulse test PW

≤ 350

µs, duty cycle ≤ 2 %

hFE CLASSIFICATION

Marking

Q

P

K

hFE1

135 to 270

200 to 400

300 to 600