CEF07N8 datasheet(1/5 Pages) CET-MOS

Part #	CEF07N8

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	CET-MOS [CET-MOS Technology Corp.]

Direct Link	https://www.cet-mos.com/en/index.asp

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CEP07N8/CEB07N8

CEF07N8

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM e

800

1.64

205

28

7

±30

V

W

A

V

W/ C

1

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type

VDSS@TJ max RDS(ON)

ID

@VGS

CEP07N8

CEF07N8

850V

1.8W

7A

7A d

10V

0.41

52

28 d

7 d

CEB07N8

850V

1.8W

7A

10V

RoHS compliant.

TO-220/263

TO-220F

http://www.cet-mos.com

Rev 1. 2022.Dec

Drain Current-Continuous @ TC = 25 C

@ TC = 100 C

A

4.2

4.2 d

Details are subject to change without notice .

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

0.61

RqJC

RqJA

2.4

65

Single Pulsed Avalanche Energy g

Single Pulsed Avalanche Current g

EAS

IAS

125

5

mJ

A

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CEF07N8 Datasheet(PDF) 1 Page - CET-MOS Technology Corp.

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