STD2NC45-1 datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

STD2NC45-1, STQ1NC45

2/11

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤0.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

THERMAL DATA

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Value

Unit

STD2NC45-1

STQ1NC45

VDS

Drain-source Voltage (VGS =0)

450

VDGR

Drain-gate Voltage (RGS =20kΩ)

450

VGS

Gate- source Voltage

± 30

Drain Current (continuos) at TC = 25°C

1.5

0.5

Drain Current (continuos) at TC = 100°C

0.95

0.315

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

3.1

Derating Factor

0.24

0.025

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

Tstg

Operating Junction Temperature

Storage Temperature

-65 to 150

°C

IPAK

TO-92

Rthj-case

Thermal Resistance Junction-case Max

4.1

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

100

120

°C/W

Rthj-lead

Thermal Resistance Junction-lead Max

°C/W

Maximum Lead Temperature For Soldering

Purpose

275

260

°C

Symbol

Parameter

Max Value

Unit

IPAK

TO-92

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

1.5

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID =IAR,VDD =50 V)

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