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STQ1NC45R-AP Datasheet(PDF) 3 Page - STMicroelectronics

Part # STQ1NC45R-AP
Description  N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1NC45R-AP Datasheet(HTML) 3 Page - STMicroelectronics

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STD2NC45-1, STQ1NC45
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
450
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 30V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
2.3
3
3.7
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 0.5 A
4.1
4.5
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 0.5 A
1.1
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS =0
160
27.5
4.7
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD =225 V, ID = 0.5 A
RG = 4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
6.7
4
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =360V, ID = 1.5 A,
VGS =10V, RG = 4.7Ω
7
1.3
3.2
10
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 360V, ID = 1.5 A,
RG =4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
8.5
12
18
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
1.5
6.0
A
A
VSD (1)
Forward On Voltage
ISD = 1.5 A, VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.5 A, di/dt = 100A/µs
VDD =100V, Tj =150°C
(see test circuit, Figure 5)
225
530
4.7
ns
µC
A



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