Nexperia

PEMB3

50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V(BR)CBO

collector-base

breakdown voltage

IC = -100 µA; IE = 0 A; Tamb = 25 °C

-50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = -2 mA; IB = 0 A; Tamb = 25 °C

-50

-

-

V

ICBO

collector-base cut-off

current

VCB = -50 V; IE = 0 A; Tamb = 25 °C

-

-

-100

nA

VCE = -30 V; IB = 0 A; Tamb = 25 °C

-

-

-1

µA

ICEO

collector-emitter cut-off

current

VCE = -30 V; IB = 0 A; Tj = 150 °C

-

-

-50

µA

IEBO

emitter-base cut-off

current

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-

-

-100

nA

hFE

DC current gain

VCE = -5 V; IC = -1 mA; Tamb = 25 °C

200

-

-

VCEsat

collector-emitter

saturation voltage

IC = -5 mA; IB = -0.25 mA; Tamb = 25 °C

-

-

-100

mV

R1

bias resistor 1 (input)

3.3

4.7

6.1

kΩ

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

3

pF

PEMB3

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Product data sheet

28 December 2022

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