1996 Apr 17

2

Philips Semiconductors

Product specification

Band-switching diodes

BA482; BA483; BA484

FEATURES

• Continuous reverse voltage:

max. 35 V

• Continuous forward current:

max. 100 mA

• Low diode capacitance:

max. 1.0 to 1.6 pF

• Low diode forward resistance:

max. 0.7 to 1.2

Ω.

APPLICATION

• VHF television tuners.

DESCRIPTION

Planar high performance band-switching diode in a hermetically sealed glass

SOD68 (DO-34) package.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

The diodes are type branded.

handbook, halfpage

MAM156

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

continuous reverse voltage

−

35

V

continuous forward current

−

100

mA

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

−

1.2

V

reverse current

see Fig.3

−

100

nA

−

1

µA

diode capacitance

BA482

0.8

1.2

pF

BA483

0.7

1.0

pF

BA484

1.0

1.6

pF

diode forward resistance

BA482

0.6

0.7

Ω

BA483

0.8

1.2

Ω

BA484

0.8

1.2

Ω