Nexperia

2PD601ART-Q

50 V, 100 mA NPN general-purpose transistor

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0.5

0.9

1.3

VBEsat

(V)

0.1

IC (mA)

10- 1

102

10

1

(1)

(2)

(3)

IC/IB = 10

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 5. Base-emitter saturation voltage as a function of

collector current; typical values

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IC (mA)

10- 1

102

10

1

10- 1

1

VCEsat

(V)

10- 2

(1)

(2)

(3)

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 6. Collector-emitter saturation voltage as a

function of collector current; typical values

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

2PD601ART-Q

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Product data sheet

12 January 2022

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