Nexperia

BAS70L-Q

General-purpose Schottky diode

10

1

1

10

rdif

(Ω)

IF (mA)

mra802

10- 1

102

102

103

f = 10 kHz

Fig. 3. Differential forward resistance as a function of

forward current; typical values

0

0.5

1

1.5

2

0

20

40

60

80

mra804

Cd

(pF)

VR (V)

Tamb = 25 °C; f = 1 MHz

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

03-04-17

Dimensions in mm

0.55

0.47

0.65

0.62

0.55

0.50

0.46

cathode marking on top side (if applicable)

1.02

0.95

0.30

0.22

0.30

0.22

2

1

Fig. 5. Package outline DFN1006-2 (SOD882)

BAS70L-Q

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Product data sheet

7 January 2022

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