13

Die Characteristics

DIE DIMENSIONS:

69 mils x 92 mils x 19 mils

1750

μm x 2330μm x 483μm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW

Thickness: Metal 1: 8k

Å ±0.4kÅ

Type: Metal 2: AICu(2%)

Thickness: Metal 2: 16k

Å ±0.8kÅ

SUBSTRATE POTENTIAL (POWERED UP):

Floating (Recommend Connection to V-)

PASSIVATION:

Type: Nitride

Thickness: 4k

Å ±0.5kÅ

TRANSISTOR COUNT:

180

Metallization Mask Layout

HFA1245

NOTE:

8. This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when using

asymmetrical supplies (e.g., V+ = 10V, V- = 0V). See the “Application Information” section for details.

-IN1

OUT1

-IN2

GND (NOTE 8)

V-

OUT2

V+

NC

NC

+IN1

+IN2

DISABLE1

DISABLE2

V-

HFA1245