BAV199W datasheet(2/8 Pages) PHILIPS

2 / 8 page

1999 May 11

Philips Semiconductors

Product speciﬁcation

Low-leakage double diode

BAV199W

FEATURES

• Small plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATIONS

• Low-leakage current applications in

surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching,

double diode in a small plastic

SOT323 (SC-70) SMD package.

The diodes are connected in series.

PINNING

DESCRIPTION

anode

cathode

cathode; anode

Fig.1 Simplified outline (SOT323; SC-70) and symbol.

Marking code: JY- = made in Hong Kong; JYt = made in Malaysia.

handbook, halfpage

MAM391

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode unless otherwise speciﬁed

VRRM

repetitive peak reverse voltage

−

continuous reverse voltage

−

continuous forward current

single diode loaded; Ts =90 °C; see Fig.2

−

135

double diode loaded; Ts =90 °C; see Fig.2 −

110

IFRM

repetitive peak forward current

−

500

IFSM

non-repetitive peak forward

current

square wave; Tj =25 °C prior to surge;

see Fig.4

tp =1 µs

−

tp =1ms

−

tp =1s

−

0.5

Ptot

total power dissipation

single diode loaded; Ts =90 °C

−

150

double diode loaded; Ts =90 °C

−

240

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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