Nexperia

BAS21TH

High-voltage switching diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Tj = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

250

V

VR

reverse voltage

-

200

V

IF

forward current

[1]

-

200

mA

tp = 1 µs; Tj(init) = 25 °C;

-

9

A

tp = 100 µs; Tj(init) = 25 °C;

-

3

A

IFSM

non-repetitive peak

forward current

tp = 10 ms; Tj(init) = 25 °C;

-

1.7

A

IFRM

repetitive peak forward

current

tp ≤ 1 ms; δ = 0.25

-

625

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

300

mW

Tj

junction temperature

-

175

°C

Tamb

ambient temperature

-55

175

°C

Tstg

storage temperature

-65

175

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.

aaa-029058

Tamb (°C)

-75

225

125

25

200

100

300

400

Ptot

(mW)

0

FR4 PCB, standard footprint

Fig. 1. Power derating curve

BAS21TH

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Product data sheet

18 January 2019

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