Nexperia

BAV99W-Q

High-speed switching diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF = 1 mA; Tamb = 25 °C

-

-

715

mV

IF = 10 mA; Tamb = 25 °C

-

-

855

mV

IF = 50 mA; Tamb = 25 °C

-

-

1

V

VF

forward voltage

IF = 150 mA; Tamb = 25 °C

-

-

1.25

V

VR = 25 V; Tamb = 25 °C

-

-

30

nA

VR = 80 V; Tamb = 25 °C

-

-

0.5

µA

VR = 25 V; Tj = 150 °C

-

-

30

µA

IR

reverse current

VR = 80 V; Tj = 150 °C

-

-

50

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

-

1.5

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;

RL = 100 Ω; Tamb = 25 °C

-

-

4

ns

VFRM

peak forward recovery

voltage

IF = 10 mA; tr = 20 ns; Tamb = 25 °C

-

-

1.75

V

006aab132

1

10

102

103

IF

(mA)

10-1

VF (V)

0

1.4

1.0

0.4

0.8

0.2

1.2

0.6

(1) (2) (3) (4)

(1) Tamb = 150 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = -40 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

006aab133

102

IR

(µA)

VR (V)

0

100

80

40

60

20

10

1

10-1

10-2

10-3

10-4

10-5

(1)

(2)

(3)

(4)

(1) Tamb = 150 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = -40 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

BAV99W-Q

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Product data sheet

7 June 2021

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