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BAW101S-Q Datasheet(PDF) 1 Page - Nexperia B.V. All rights reserved |
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BAW101S-Q Datasheet(HTML) 1 Page - Nexperia B.V. All rights reserved |
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1 / 10 page ![]() BAW101S-Q High voltage double diode 14 September 2021 Product data sheet 1. General description The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Small plastic SMD package • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Electrically insulated diodes • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • High voltage switching • Automotive • Communication 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IF forward current single diode loaded [1] - - 250 mA VR reverse voltage - - 300 V trr reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω; Tj = 25 °C; measured at IR = 3 mA - - 50 ns [1] Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm². |
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