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BB145 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BB145
Description  Low-voltage variable capacitance diode
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BB145 Datasheet(HTML) 2 Page - NXP Semiconductors

  BB145 Datasheet HTML 1Page - NXP Semiconductors BB145 Datasheet HTML 2Page - NXP Semiconductors BB145 Datasheet HTML 3Page - NXP Semiconductors BB145 Datasheet HTML 4Page - NXP Semiconductors BB145 Datasheet HTML 5Page - NXP Semiconductors BB145 Datasheet HTML 6Page - NXP Semiconductors BB145 Datasheet HTML 7Page - NXP Semiconductors BB145 Datasheet HTML 8Page - NXP Semiconductors  
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1999 Dec 15
2
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
BB145
FEATURES
• Ultra small plastic SMD package
• C4: 3 pF; ratio: 2.1
• Low series resistance.
APPLICATIONS
• Voltage controlled oscillators
(VCO).
DESCRIPTION
The BB145 is a planar technology
variable capacitance diode in a
SOD523 (SC-79) package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline
(SOD523; SC-79) and symbol.
handbook, 2 columns
12


MBK441
Marking code: U.
Orientation of marking code as shown.
Cathode side indicated by a bar.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
6V
VRM
peak reverse voltage
in series with a 10 k
Ω resistor
−
8V
IF
continuous forward current
−
20
mA
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IR
reverse current
VR = 6 V; see Fig.3
−−
10
nA
VR =6V; Tj =85 °C; see Fig.3
−−
200
nA
rs
diode series resistance
f = 470 MHz; VR =1V
−−
0.6
Ω
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Figs 2 and 4
6.4
−
7.4
pF
VR = 4 V; f = 1 MHz; see Figs 2 and 4
2.75
−
3.25
pF
capacitance ratio
f = 1 MHz
2
−−
C
d1V
()
C
d4V
()
----------------



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