BAS521Q

Document number: DS40045 Rev. 1 - 2

2 of 4

www.diodes.com

September 2017

© Diodes Incorporated

BAS521Q

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

VRRM

300

V

Working Peak Reverse Voltage

DC Blocking Voltage

VRWM

300

V

Forward Current (Note 7)

IF

250

mA

Non-Repetitive Peak Forward Surge Current @ t = 1.0µs

IFSM

4.5

A

Repetitive Peak Forward Current (Note 7)

IFRM

1

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 7)

PD

325

mW

Thermal Resistance Junction to Ambient Air (Note 7)

RJA

385

C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 8)

V(BR)R

300



V

IR = 100A

Forward Voltage

VF



1.1

V

IF = 100mA

Reverse Current (Note 8)

IR







50

150

100

nA

nA



A

VR = 5V

VR = 250V

VR = 250V, TJ = +150C

Total Capacitance

CT



5

pF

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr



50

ns

IF = IR = 30mA,

Irr = 0.1 x IR, RL = 100Ω

Notes:

7. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

8. Short duration pulse test used to minimize self-heating effect.

Figure 1 Power Derating Curve, Total Package

0

100

0

25

50

100

125

150

175

T , AMBIENT TEMPERATURE (°C)

A

200

300

50

350

150

250

Note 7

75

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6 1.8

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics, Per Element

F

0.1

1

10

100

1,000