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CEM3301 Datasheet(PDF) 1 Page - CET-MOS Technology Corp. |
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CEM3301 Datasheet(HTML) 1 Page - CET-MOS Technology Corp. |
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1 / 4 page  http://www.cet-mos.com Rev 3. 2011.Feb Details are subject to change without notice . P-Channel Enhancement Mode Field Effect Transistor CEM3301 FEATURES -30V, -7.0A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -30 2.5 -28 -7.0 ±20 V W A A V 1 SO-8 1 D D D D S S S G 1 2 3 4 8 7 6 5 Lead free product is acquired. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 50 RθJA |
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