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ISL70003SEHF/PROTO Datasheet(PDF) 27 Page - Renesas Technology Corp |
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ISL70003SEHF/PROTO Datasheet(HTML) 27 Page - Renesas Technology Corp |
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27 / 32 page ![]() ISL70003SEH FN8604 Rev 6.00 Page 27 of 32 December 8, 2016 Package Characteristics Weight of Packaged Device 1.43 Grams (typical) - R64.A Package 2.65 Grams (typical) - R64.C Package Lid Characteristics Finish: Gold Lid Potential: PGND Die Characteristics Die Dimensions 8300µm x 8300µm (327 mils x 327 mils) Thickness: 300µm ±25.4µm (12 mils ±1 mil) Interface Materials GLASSIVATION Type: Silicon Oxide and Silicon Nitride Thickness: 0.3µm ±0.03µm to 1.2µm ±0.12µm TOP METALLIZATION Type: AlCu (99.5%/0.5%) Thickness: 2.7µm ±0.4µm BACKSIDE FINISH Silicon PROCESS 0.6µM BiCMOS Junction Isolated ASSEMBLY RELATED INFORMATION Substrate and Lid Potential PGND ADDITIONAL INFORMATION Worst Case Current Density <2 x 105 A/cm2 Transistor Count 26,144 Metallization Mask Layout ISL70003SEH PVIN1 LX1 PGND1 PVIN2 LX2 PGND2 PVIN10 LX10 PGND10 PVIN9 LX9 PGND9 GND GND GND GND GND PGOOD SEL1 SEL2 VREF BUFOUT BUFIN- BUFIN+ OCSETB OCSETA SGND IMON DE ORIGIN |
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