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ISL70020SEHL/PROTO Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # ISL70020SEHL/PROTO
Description  40V, 65A Enhancement Mode GaN Power Transistors
PDF  13 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70020SEHL/PROTO Datasheet(HTML) 2 Page - Renesas Technology Corp

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ISL70020SEH, ISL73020SEH
1. Overview
R34DS0007EU0104 Rev.1.04
Page 2 of 12
Apr 21, 2022
1.
Overview
1.1
Ordering Information
Ordering Part Number (Note 1)
Radiation Hardness
(Total Ionizing Dose)
Temperature
Range (°C)
Package
(RoHS Compliant)
Package
Drawing
ISL70020SEHML
HDR to 100krad(Si)
LDR to 75krad(Si)
-55 to +125
4 Ld SMD
J4.A
ISL70020SEHMX (Notes 3, 4)
HDR to 100krad(Si)
LDR to 75krad(Si)
-55 to +125
Die
N/A
ISL70020SEHX/SAMPLE (Notes 3, 2, 4)
N/A
-55 to +125
Die
N/A
ISL70020SEHL/PROTO (Note 2)
N/A
-55 to +125
4 Ld SMD
J4.A
ISL73020SEHML
LDR to 75krad(Si)
-55 to +125
4 Ld SMD
J4.A
ISL73020SEHMX (Note 3, 4)
LDR to 75krad(Si)
-55 to +125
Die
N/A
ISL73020SEHX/SAMPLE (Notes 3, 2, 4)
N/A
-55 to +125
Die
N/A
ISL73020SEHL/PROTO (Note 2)
N/A
-55 to +125
4 Ld SMD
J4.A
ISL70040SEHEV5Z (Note 5)
ISL70040SEH and ISL70020SEH Evaluation Board
Notes:
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with
both SnPb and Pb-free soldering operations.
2. The /PROTO and /SAMPLE parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These
parts are intended for engineering evaluation purposes only. The /PROTO and /SAMPLE parts meet the electrical limits and conditions
across the temperature range specified in this datasheet and are of the same form and fit as the ISL70020SEHML/ISL73020SEHML
devices. The /PROTO and /SAMPLE parts do not come with a Certificate of Conformance (C of C) and have no accompanying data or
documentation.
3. Die product tested at TA = + 25°C. The wafer probe test includes functional and parametric testing sufficient to make the die capable of
meeting the electrical performance outlined in “Electrical Specifications” on page 5.
4. The die solder bump composition is PbSn (95%/5%) with a melt point of 312°C. Recommended reflow profile includes a ramp-up to a
peak of 350-360°C with a dwell time of 3 minutes at/near the peak before ramp-down in a hydrogen forming gas with 3% hydrogen.
5. Evaluation board uses the /PROTO parts and /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect
(SEE) immunity.
Table 1.
Key Differences Between Family of Parts
Part Number
Breakdown Voltage (V)
Drain Current (A)
rDS(ON) (mΩ)QG (nC)
ISL7x020SEH
40
65
3.5
19
ISL7x023SEH
100V
60
5
14
ISL7x024SEH
200V
7.5
45
2.5



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