PDTA114T_SER_7

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 07 — 20 April 2007

4 of 11

NXP Semiconductors

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 k

Ω, R2 = open

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60

µm copper strip line, standard footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60

µm copper strip line, standard footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−50

V

VCEO

collector-emitter voltage

open base

-

−50

V

VEBO

emitter-base voltage

open collector

-

−5V

IO

output current

-

−100

mA

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

−100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

PDTA114TE

[1] -

150

mW

PDTA114TK

[1] -

250

mW

PDTA114TM

[2][3] -

250

mW

PDTA114TS

[1] -

500

mW

PDTA114TT

[1] -

250

mW

PDTA114TU

[1] -

200

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

PDTA114TE

[1] -

-

833

K/W

PDTA114TK

[1] -

-

500

K/W

PDTA114TM

[2][3] -

-

500

K/W

PDTA114TS

[1] -

-

250

K/W

PDTA114TT

[1] -

-

500

K/W

PDTA114TU

[1] -

-

625

K/W