PDTC123TM datasheet(6/11 Pages) NEXPERIA

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PDTA123T_SER_2

Product data sheet

Rev. 02 — 3 September 2009

5 of 10

NXP Semiconductors

PDTA123T series

PNP resistor-equipped transistors; R1 = 2.2 k

Ω, R2 = open

Characteristics

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −50 V; IE =0A

−100 nA

ICEO

collector-emitter cut-off

current

VCE = −30 V; IB =0A

−1

µA

VCE = −30 V; IB =0A;

Tj = 150 °C

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−100 nA

hFE

DC current gain

VCE = −5 V; IC = −20 mA

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

−150 mV

bias resistor 1 (input)

1.54

2.2

2.86

Ω

collector capacitance

VCB = −10 V; IE =ie =0A;

f=1MHz

--3

VCE = −5V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

IC (mA)

−10−1

−102

−10

−1

006aaa691

200

300

100

400

500

hFE

(1)

(2)

(3)

006aaa692

IC (mA)

−10−1

−102

−10

−1

−10−1

−1

VCEsat

(V)

−10−2

(3)

(2)

(1)

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