PDTA124E_SER

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 8 — 25 November 2011

7 of 17

NXP Semiconductors

PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k

, R2 = 22 k

7.

Characteristics

[1]

Characteristics of built-in transistor

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = 50 V; IE =0 A

-

-

100

nA

ICEO

collector-emitter

cut-off current

VCE = 30 V; IB =0 A

-

-

100

nA

VCE = 30 V; IB =0 A;

Tj = 150 C

--

5

A

IEBO

emitter-base cut-off

current

VEB = 5V; IC =0A

-

-

180

A

hFE

DC current gain

VCE = 5V; IC = 5mA

60

-

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

-

-

150

mV

VI(off)

off-state input voltage

VCE = 5V; IC = 100 A-

1.1

0.8

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 5mA

2.5

1.7

-

V

R1

bias resistor 1 (input)

15.4

22

28.6

k



R2/R1

bias resistor ratio

0.8

1

1.2

Cc

collector capacitance

VCB = 10 V; IE =ie =0A;

f= 1MHz

--

3

pF

fT

transition frequency

VCE = 5V; IC = 10 mA;

f = 100 MHz

[1]

-180

-MHz

VCE = 5V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 40 C

IC/IB =20

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 40 C

Fig 6.

DC current gain as a function of collector

current; typical values

Fig 7.

Collector-emitter saturation voltage as a

function of collector current; typical values

IC (mA)

-10-1

-102

-10

-1

006aac800

102

10

103

hFE

1

(1)

(2)

(3)

006aac801

IC (mA)

-10-1

-102

-10

-1

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)