PDTA124X_SER_8

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 08 — 3 September 2009

5 of 12

NXP Semiconductors

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 k

Ω, R2 = 47 kΩ

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60

µm copper strip line, standard footprint.

7.

Characteristics

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT416

[1] -

-

833

K/W

SOT490

[1][2] -

-

500

K/W

SOT346

[1] -

-

500

K/W

SOT883

[2][3] -

-

500

K/W

SOT54

[1] -

-

250

K/W

SOT23

[1] -

-

500

K/W

SOT323

[1] -

-

625

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −50 V; IE =0A

-

-

−100 nA

ICEO

collector-emitter cut-off

current

VCE = −30 V; IB =0A

-

-

−1

µA

VCE = −30 V; IB =0A;

Tj = 150 °C

--

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

-

-

−120 µA

hFE

DC current gain

VCE = −5 V; IC = −5mA

80

-

-

VCEsat

collector-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

--

−150 mV

VI(off)

off-state input voltage

VCE = −5 V; IC = −100 µA-

−0.8

−0.5

V

VI(on)

on-state input voltage

VCE = −0.3 V; IC = −2mA

−2

−1.1

-

V

R1

bias resistor 1 (input)

15.4

22

28.6

k

Ω

R2/R1

bias resistor ratio

1.7

2.1

2.6

Cc

collector capacitance

VCB = −10 V; IE =ie =0A;

f=1MHz

--3

pF