Nexperia

PDTA143X/123J/143Z/114Y/124XQB

series

50 V, 100 mA PNP resistor-equipped transistors

8. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

-50

V

VCEO

collector-emitter voltage

open base

-

-50

V

emitter-base voltage

PDTA143XQB

-

-7

V

PDTA123JQB

-

-5

V

PDTA143ZQB

-

-5

V

PDTA114YQB

-

-6

V

VEBO

PDTA124XQB

open collector

-

-7

V

input voltage

PDTA143XQB

-30

+7

V

PDTA123JQB

-12

+5

V

PDTA143ZQB

-30

+5

V

PDTA114YQB

-40

+6

V

VI

PDTA124XQB

-40

+7

V

IO

output current

-

-100

mA

[1] -

340

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[2] -

420

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided; 35 µm copper; tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB; single-sided; 70 µm copper; tin-plated and standard footprint.

Tamb (°C)

-75

175

125

25

75

-25

aaa-030584

200

300

100

400

500

Ptot

(mW)

0

(1)

(2)

(1) FR4 PCB; single-sided; 70 µm copper; standard footprint

(2) FR4 PCB; single-sided; 35 µm copper; standard footprint

Fig. 1. Power derating curves

PDTA143X_TO_124XQB_SER

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Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 28 September 2021

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