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ISL74422BRHF/PROTO Datasheet(PDF) 2 Page - Renesas Technology Corp |
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ISL74422BRHF/PROTO Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 3 page  ISL74422BRH FN6057 Rev 0.00 Page 2 of 3 October 2003 Die Characteristics DIE DIMENSIONS: 4191 m x 4826m (165 mils x 190 mils) Thickness: 483 m 25.4m (19 mils 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ 1.0kÅ Top Metallization: Type: AlSiCu Thickness: 16.0kÅ 2kÅ Substrate: Radiation Hardened Silicon Gate Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 40 Metallization Mask Layout ISL74422BRH (3) VS (IB) (15, 16) VS (OB) (13) +VOUT (12) -VOUT (8, 9) GND (OB) (5) GND (IB) (4) VIN |
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