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PCFF30H120SWF Datasheet(PDF) 1 Page - ON Semiconductor

Part # PCFF30H120SWF
Description  Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 30 A
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

PCFF30H120SWF Datasheet(HTML) 1 Page - ON Semiconductor

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DIE DATA SHEET
www.onsemi.com
© Semiconductor Components Industries, LLC, 2023
April, 2023 − Rev. 0
1
Publication Order Number:
PCFF30H120SWF−DIE/D
Diode – Power, Bare Die
Gen VII, Fast Recovery
1200 V, 30 A
PCFF30H120SWF
Features
• Advanced Gen VII Technology
• Fast and Soft Recovery
• Maximum Junction Temperature 175°C
• Low Forward Voltage: VF = 1.78 V (Typ.) @ IF = 30 A
• Easy to Parallel Operation
Typical Applications
• Solar
• Energy Storage
• Industrial Motor Control
MECHANICAL PARAMETERS
Parameter
Value
Unit
Die Size (w/ Scribe Lane)
2,970 x 4,500
mm2
Anode Pad Size
1,987 x 3,517
mm2
Scribe Lane Width
80
mm
Die Thickness
119
mm
Top Metal
6 mm AlSiCu
Back Metal
1.65 mm Ti/NiV/Ag
Topside Passivation
Silicon Nitride plus Polyimide
Wafer Diameter
200 mm
Max Possible Die Per
Wafer
1886
Recommended Storage
Environment
In original container, in dry nitrogen,
< 6 months at an ambient temperature of 23°C
Device
Inking
Shipping
ORDERING INFORMATION
PCFF30H120SWF
Yes
Sawn Wafer
on Tape
DIE OUTLINE
VR = 1200 V
IF = 30 A
DIODE DIE
C
A


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