D7V0X1B2LP3-7

Document number: DS41894 Rev. 1 - 2

2 of 5

www.diodes.com

May 2019

© Diodes Incorporated

D7V0X1B2LP3-7

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Current

IPP

1.5

A

8/20µs, Per Figure 3

ESD Protection

– Contact Discharge

VESD_CONTACT

±15

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

VESD_AIR

±15

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 6)

PD

250

mW

Thermal Resistance, Junction to Ambient (Note 6)

RJA

500

C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

VRWM

—

—

7.0

V

—

Channel Leakage Current (Note 7)

IRM

—

—

200

nA

VRWM = 7.0V

Breakdown Voltage

VBR

8.0

—

—

V

IR = 1mA

Clamping Voltage

VCL

—



—

14

V

IPP = 1A, tP = 8/20µs

Channel Input Capacitance

CT

—

0.23

0.4

pF

VR = 2.5V, f = 1MHz

—

0.3

—

pF

VR = 0V, f = 1MHz

Notes:

6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes

Incorporated’s suggested pad layout, which can be found on our website at

http://www.diodes.com/package-outlines.html.

7. Short duration pulse test used to minimize self-heating effect.

T , AMBIENT TEMPERATURE (癈 )

Figure 1 Power Derating Curve

A

25

50

75

100

125

150

0

175

0

25

50

75

100

125

150

175

200

225

250

Note 5

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (癈 )

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200

(

oC)

(

oC)

Note 6