| Electronic Components Datasheet Search |
|
BC846S Datasheet(PDF) 4 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BC846S Datasheet(HTML) 4 Page - NXP Semiconductors |
|
4 / 8 page ![]() 1999 Sep 01 4 Philips Semiconductors Product specification NPN general purpose double transistor BC846S Fig.2 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage 103 102 10 MGL738 10−1 1 IC (mA) VCEsat (mV) 10 102 103 (1) (2) (3) Fig.3 Base-emitter voltage as a function of collector current; typical values. VCE =5V. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 150 °C. handbook, halfpage 200 1200 400 600 800 1000 MGL739 10−1 1 VBE (mV) IC (mA) 10 102 103 (1) (2) (3) handbook, full pagewidth 0 300 400 100 200 MGL740 10−1 1 hFE IC (mA) 10 102 103 (1) (2) (3) Fig.4 DC current gain as a function of collector current; typical values. VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |