D12V0HA1U2LPQ

Document number: DS42989 Rev. 1 - 2

2 of 5

www.diodes.com

November 2022

© 2022 Copyright Diodes Incorporated. All Rights Reserved.

D12V0HA1U2LPQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

PPP

500

W

8/20µs, per Figure 3

Peak Pulse Current

IPP

25

A

8/20µs, per Figure 3

ESD Protection

— Contact Discharge

VESD_CONTACT

±30

kV

IEC 61000-4-2 Standard

ESD Protection

— Air Discharge

VESD_AIR

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

PD

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

RϴJA

500

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

VRWM

—

—

12.0

V

—

Reverse Current (Note 6)

IR

—

0.02

0.1

µA



VR = VRWM

Reverse Breakdown Voltage

VBR

13.5

—

16.5

V

IR = 1mA

Reverse Clamping Voltage

VCL

—

15

—

V

IPP = 1A, tP = 8/20μs

—

17

—

IPP = 10A, tP = 8/20μs

—

20

—

IPP = 25A, tP = 8/20μs

Capacitance

CT

—

110

—

pF

VR = 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on

Diodes Incorporated’s suggested pad layout, which can be found on our website at

http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.