BC847AT datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 26

Philips Semiconductors

Preliminary speciﬁcation

NPN general purpose transistors

BC846T; BC847T

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

833

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−−

IE = 0; VCB = 30 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 2 mA; VCE =5V

BC846AT; BC847AT

110

−

220

BC846BT; BC847BT

200

−

450

BC847CT

420

−

800

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−−

200

IC = 100 mA; IB = 5 mA; note 1

−−

400

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

580

−

700

IC = 10 mA; VCE =5V

−−

770

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−−

1.5

emitter capacitance

IC =ic = 0; VEB = 500 mV; f = 1 MHz −

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−−

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