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BC856T Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BC856T
Description  PNP general purpose transistors
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC856T Datasheet(HTML) 2 Page - NXP Semiconductors

  BC856T Datasheet HTML 1Page - NXP Semiconductors BC856T Datasheet HTML 2Page - NXP Semiconductors BC856T Datasheet HTML 3Page - NXP Semiconductors BC856T Datasheet HTML 4Page - NXP Semiconductors BC856T Datasheet HTML 5Page - NXP Semiconductors BC856T Datasheet HTML 6Page - NXP Semiconductors BC856T Datasheet HTML 7Page - NXP Semiconductors BC856T Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 26
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856T; BC857T
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
PNP transistor in an SC-75 plastic package.
NPN complements: BC846T and BC847T.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC856AT
3A
BC857BT
3F
BC856BT
3B
BC857CT
3G
BC857AT
3E
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SC-75) and symbol.
handbook, halfpage
MAM362
1
2
3
Top view
12
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC856AT; BC856BT
−−80
V
BC857AT; BC857BT; BC857CT
−−50
V
VCEO
collector-emitter voltage
open base
BC856AT; BC856BT
−−65
V
BC857AT; BC857BT; BC857CT
−−45
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−100
mA
ICM
peak collector current
−−200
mA
IBM
peak base current
−−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
150
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C



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