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IXTP10N60PM Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXTP10N60PM
Description  PolarHV Power MOSFET
PDF  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP10N60PM Datasheet(HTML) 1 Page - IXYS Corporation

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© 2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 175°C
600
V
V
DGR
T
J
= 25
°C to 175°C; R
GS = 1 MΩ
600
V
V
GS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C = 25°C5
A
I
DM
T
C = 25°C, pulse width limited by TJM
30
A
I
AR
T
C = 25°C10
A
E
AR
T
C = 25°C20
mJ
E
AS
T
C = 25°C
500
mJ
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
10
V/ns
T
J
≤ 150°C, R
G = 10 Ω
P
D
T
C = 25°C50
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
T
SOLD
Plastic body for 10 s
260
°C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
4g
DS99450E(04/06)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0 V, ID = 250 μA
600
V
V
GS(th)
V
DS
= V
GS, ID = 100μA
3.0
5.0
V
I
GSS
V
GS = ±30 VDC, VDS = 0
±100
nA
I
DSS
V
DS
= V
DSS
5
μA
V
GS = 0 V
T
J = 125°C50
μA
R
DS(on)
V
GS = 10 V, ID = 5 A
740 m
Ω
Pulse test, t
≤ 300 μs, duty cycle d ≤ 2 %
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP 10N60PM
V
DSS
= 600
V
I
D25
=
5
A
R
DS(on)
≤≤≤≤≤ 740 m
Ω
Ω
Ω
Ω
Ω
(Electrically Isolated Tab)
G = Gate
D = Drain
S = Source
Features
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G
D
S
Isolated Tab
Preliminary Technical Information


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